Towards practical applications of quantum emitters in boron nitride
Maciej Koperski, K. Pakuła, Karol Nogajewski, Aleksandra K. Dąbrowska, Mateusz Tokarczyk, Thomas Pelini, Johannes Binder, Tomasz Fąs, J. Suffczyński, R. Stępniewski, A. Wysmołek, M. Potemski
Abstract
We demonstrate quantum emission capabilities from boron nitride structures which are relevant for practical applications and can be seamlessly integrated into a variety of heterostructures and devices. First, the optical properties of polycrystalline BN films grown by metalorganic vapour-phase epitaxy are inspected. We observe that these specimens display an antibunching in the second-order correlation functions, if the broadband background luminescence is properly controlled. Furthermore, the feasibility to use flexible and transparent substrates to support hBN crystals that host quantum emitters is explored. We characterise hBN powders deposited onto polydimethylsiloxane films, which display quantum emission characteristics in ambient environmental conditions.