Enhanced field-effect mobility (>250 cm<sup>2</sup>/V·s) in GaN MOSFETs with deposited gate oxides via mist CVD
Kazuki Ikeyama, Hidemoto Tomita, Sayaka Harada, Takashi Okawa, Li Liu, Toshiyuki Kawaharamura, Hiroki Miyake, Yoshitaka Nagasato
Abstract
Abstract We report an enhanced field-effect mobility (>250 cm 2 ·V −1 ·s −1 ) in GaN MOSFETs. High mobility was achieved by reducing the oxidation of the GaN surface, which was a major factor affecting channel mobility in GaN MOSFETs. Among various gate oxide deposition methods, mist CVD using O 3 suppressed GaN surface oxidation. The best field-effect mobility was observed using mist CVD-deposited gate oxides, achieving a peak mobility of 266 cm 2 ·V −1 ·s −1 with a high threshold voltage of 4.8 V.
Topics & Concepts
MistMaterials scienceOptoelectronicsElectron mobilityField effectThreshold voltageMOSFETGate voltageGate oxideChemical vapor depositionAnalytical Chemistry (journal)VoltageChemistryElectrical engineeringTransistorPhysicsMeteorologyEngineeringChromatographyGaN-based semiconductor devices and materialsSemiconductor materials and devicesSilicon Carbide Semiconductor Technologies