Scalable transfer printing approach to heterogeneous integration of InP lasers on silicon-on-insulator waveguide platform
Samir Ghosh, J O'Callaghan, Owen Moynihan, Duanni Huang, Harel Frish, Haisheng Rong, Kevin Thomas, E. Pelucchi, Brian Corbett
Abstract
InP-based edge-emitting O-band lasers are integrated onto silicon photonics circuit employing micro-transfer printing technology. Blocks of unpatterned InP gain material of typical size 1000 × 60 μ m2 are first transferred onto 400 nm thick silicon rib waveguides with the fabrication steps performed on the target wafer to realize the final lasers. As a result, the InP ridge waveguides are aligned with lithographic accuracy to the underlying Si waveguides resulting in an approach free from any misalignment stemming from the transfer printing process. The fabricated Distributed Bragg Reflector laser shows lasing around 100 mA current injection with minimum 1 mW of output power coupled to a single mode fiber. This integration method paves a reliable route toward scaling-up the integration of active devices such as lasers, modulators, and detectors on 300-mm diameter silicon wafers, which requires high-uniformity across the wafer.