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Modeling of shallow extension engineered dual metal surrounding gate (SEE-DM-SG) MOSFET gate-induced drain leakage (GIDL)

Anubha Goel, Sonam Rewari, Seema Verma, R.S. Gupta

2020Indian Journal of Physics35 citationsDOI

Topics & Concepts

Leakage (economics)MOSFETMaterials scienceQuantum tunnellingDrain-induced barrier loweringMetal gateSuperposition principleOptoelectronicsThreshold voltageElectric fieldVoltageElectrical engineeringGate oxidePhysicsTransistorEngineeringMacroeconomicsEconomicsQuantum mechanicsSemiconductor materials and devicesAdvancements in Semiconductor Devices and Circuit DesignElectrostatic Discharge in Electronics
Modeling of shallow extension engineered dual metal surrounding gate (SEE-DM-SG) MOSFET gate-induced drain leakage (GIDL) | Litcius