2D Vertical and Horizontal Memristors Based on Large-Area 2D Tellurium Film
Luji Li, Gaojie Zhang, Muhammad Younis, Tianyuan Luo, Yang Li, Jin Wen, Hao Wu, Bichen Xiao, Wenfeng Zhang, Haixin Chang
Abstract
2D tellurium (Te) films are appealing materials in electronic devices like transistors and detectors. However, applications in the field of memristors of the 2D Te film are still rare. Here, we report large-area 2D Te films prepared by two-step thermal evaporation, which achieves memristor functions in vertical and horizontal devices after O 2 ion etching. The vertical memristor has a long retention time of more than 10000 s and multilevel storage capabilities, and the response speeds of high- and low-resistance states are on the order of nanoseconds. The horizontal devices can simulate synaptic functions such as short- or long-term memory transformation and paired-pulse depression. Our work demonstrates that 2D thin Te films are a promising material in the field of memristors.