Tunable electroluminescence from an n-ZnO/p-GaN heterojunction with a CsPbBr<sub>3</sub> interlayer grown by pulsed laser deposition
Yu Huang, X. R. Zhou, Lichun Zhang, Guochen Lin, Man Xu, Yuan Zhao, Mengmeng Jiao, Dengying Zhang, Bingying Pan, Linwei Zhu, Fengzhou Zhao
Abstract
Heterojunction light-emitting diodes (LEDs) based on n-ZnO/CsPbBr<sub>3</sub>/p-GaN have been fabricated by using pulsed laser deposition (PLD).
Topics & Concepts
Materials scienceElectroluminescencePulsed laser depositionOptoelectronicsHeterojunctionLight-emitting diodeDeposition (geology)DiodeLaserThin filmOpticsNanotechnologyLayer (electronics)PaleontologyBiologySedimentPhysicsPerovskite Materials and ApplicationsGaN-based semiconductor devices and materialsLuminescence Properties of Advanced Materials