<i>In situ</i> integration of Te/Si 2D/3D heterojunction photodetectors toward UV-vis-IR ultra-broadband photoelectric technologies
Jianting Lu, Lingjiao Zhang, Churong Ma, Wenjing Huang, Qiaojue Ye, Huaxin Yi, Zhaoqiang Zheng, Guowei Yang, Chuan Liu, Jiandong Yao
Abstract
Jones, respectively, making the Te/Si devices among the best-performing 2D/3D heterojunction photodetectors. On the whole, this study has established that PLD is a promising technique for producing high-quality Te nanofilms with good scalability, and the Te/Si 2D/3D heterojunction provides a promising platform for implementing high-performance ultra-broadband photoelectronic technologies.
Topics & Concepts
Materials scienceOptoelectronicsHeterojunctionPhotodetectorResponsivityPhotoelectric effectBand gapUltravioletSemiconductorInfraredOpticsPhysics2D Materials and ApplicationsNanowire Synthesis and ApplicationsPhotonic and Optical Devices