TD-SRAM: Time-Domain-Based In-Memory Computing Macro for Binary Neural Networks
Jiahao Song, Yuan Wang, Minguang Guo, Xiang Ji, Kaili Cheng, Yixuan Hu, Xiyuan Tang, Runsheng Wang, Ru Huang
Abstract
In-Memory Computing (IMC), which takes advantage of analog multiplication-accumulation (MAC) insides memory, is promising to alleviate the Von-Neumann bottleneck and improve the energy efficiency of deep neural networks (DNNs). Since the time-domain (TD) computing is also an energy-efficient analog computing paradigm, we present an 8kb mixed-signal IMC macro, TD-SRAM, by combining IMC with TD computing. A dual-edge single input (DESI) TD computing topology is proposed, which can significantly improve the area and power efficiencies of TD cell. The TD-SRAM bitcell consisting of a 6T DESI based TD cell and a 6T-SRAM cell supports binary DNNs. In the IMC mode, 60 columns work in parallel and 96-input binary-MAC operations are processed in each column. Implemented in a standard 40-nm CMOS process, the TD-SRAM achieves the high energy efficiency of 537 TOPS/W at 0.9-V supply. With different DNN topologies, the test chips achieve the accuracy of 95.90%-98.00% with a dual 2-bit time-to-digital converter (TDC) in the MNIST dataset.