Enhanced excitation and readout of plasmonic cavity modes in NPoM via SiN waveguides for on-chip SERS.

Abstract

can be achieved for gap spacings around 1 nm. So as to reduce unwanted SiN Raman background, the output Stokes signals are transferred to transversely placed waveguides, reaching coupling efficiencies of up to 10%. Geometrical parameters such as the gap thickness as well as the radius and position of the nanoparticle provide full control over the main spectral features, thereby enabling us to engineer and drive the optical response of NPoMs for high-performance SERS in Si-based photonic integrated platforms.

Topics & Concepts