Spin orbitronics at a topological insulator-semiconductor interface
Thomas Guillet, Carlo Zucchetti, Adele Marchionni, Ali Hallal, Paolo Biagioni, Céline Vergnaud, A. Marty, Hanako Okuno, A. Masseboeuf, Marco Finazzi, F. Ciccacci, Mairbek Chshiev, Federico Bottegoni, Matthieu Jamet
Abstract
Topological insulators (TIs) hold great promise for new spin-related phenomena and applications thanks to the spin texture of their surface states. However, a versatile platform allowing for the exploitation of these assets is still lacking due to the difficult integration of these materials with the mainstream Si-based technology. Here, we exploit germanium as a substrate for the growth of ${\mathrm{Bi}}_{2}{\mathrm{Se}}_{3}$, a prototypical TI. We probe the spin properties of the ${\mathrm{Bi}}_{2}{\mathrm{Se}}_{3}$/Ge pristine interface by investigating the spin-to-charge conversion taking place in the interface states by means of a nonlocal detection method. The spin population is generated by optical orientation in Ge and diffuses toward the ${\mathrm{Bi}}_{2}{\mathrm{Se}}_{3}$, which acts as a spin detector. We compare the spin-to-charge conversion in ${\mathrm{Bi}}_{2}{\mathrm{Se}}_{3}$/Ge with the one taking place in Pt in the same experimental conditions. Notably, the sign of the spin-to-charge conversion given by the TI detector is reversed compared to the Pt one, while the efficiency is comparable. By exploiting first-principles calculations, we ascribe the sign reversal to the hybridization of the topological surface states of ${\mathrm{Bi}}_{2}{\mathrm{Se}}_{3}$ with the Ge bands. These results pave the way for the implementation of highly efficient spin detection in TI-based architectures compatible with semiconductor-based platforms.