Sol-gel synthesis of tetragonal BaTiO3 thin films under fast heating

Abstract

BaTiO3 thin films with a thickness of 400 nm were prepared by spin coating onto a quartz plate and subsequently calcined at 700 °C. The effect of fast (540 K min−1) and slow (10 K min−1) heating on morphology, unit cell parameter and dielectric constant was studied. Fast heating yields tetragonal BaTiO3 films with a semiconductor band gap of 3.54 eV, dielectric constant of 685 and a surface roughness of 12 nm. In contrast, slow heating produces tetragonal BaTiO3 films with a larger band gap of 3.78 eV, a dielectric constant of 219 and a surface roughness of 35 nm. A kinetic constant of 0.0061 min−1 was obtained in the decomposition of methylene blue with UV light over BTO films at 20 °C.

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