Manipulating heat transfer at graphene/silicon interface with nitrogen doping
Haiying Yang, Shan Gao, Yichen Pan, Ping Yang
Abstract
We perform a numerical evaluation on manipulating the thermal transfer at graphene/silicon by adjusting nitrogen doping modes. The results show that nitrogen doping can reduce the in-plane thermal conductivity of graphene/silicon heterostructure , but when doping is regular and distributed throughout graphene, the thermal conductivity will increase abruptly. This phenomenon can be attributed to the coupling between nitrogen phonons, which provides a new heat transfer channel for in-plane heat transfer. We also detected that the in-plane thermal conductivity of regular doping is higher than that of random doping in all concentration ranges. In the other, we found that nitrogen doping can significantly reduce the interfacial thermal resistance of graphene/silicon interface. The above-mentioned findings provide new ideas and theoretical support for controlling the heat transfer between graphene based heterogeneous interfaces.