Low-temperature supercritical dehydroxylation for achieving an ultra-low subthreshold swing of thin-film transistors
Kuan‐Chang Chang, Luodan Hu, Kang Qi, Lei Li, Xinnan Lin, Shengdong Zhang, Ziwen Wang, Ying‐Chih Lai, Heng‐Jui Liu, Tze‐Peng Kuo
Abstract
. Moreover, other key figures of merits including threshold voltage, on/off ratio and field effect mobility all improved after the supercritical dehydroxylation. The bandgap of the gate dielectric material increased due to the supercritical dehydroxylation verified by the current conduction mechanism. Besides, numerous material analyses further confirmed that owing to the supercritical dehydroxylation the dominant dehydration reactions can effectively repair the defects introduced in the device manufacture. The ultra-low subthreshold swing with optimized electrical performances can be achieved via the low-temperature supercritical dehydroxylation treatment, enabling its promising potential in realizing ultra-fast and low power electronics.