Numerical studies on a ternary AgInTe2 chalcopyrite thin film solar cell
Arifuzzaman Joy, Ahnaf Tahmid Abir, Bipanko Kumar Mondal, Jaker Hossain
Abstract
This paper theoretically outlines a new n -AlSb/ p -AgInTe 2 / p + -BaSi 2 solar cell. The dominance of several factors such as depth, carrier density and defects of every layer on the photovoltaic (PV) outcome has been ascertained applying Solar Cell Capacitance Simulator (SCAPS)-1D computer-based simulator. The AgInTe 2 (AIT) solar cell has been probed for finding the role of BaSi 2 as a back surface field (BSF) layer. It is revealed that the device power conversion efficiency (PCE) increments from 30% to 34% owing to the use of BaSi 2 semiconducting BSF with V OC = 0.90 V, J SC = 43.75 mA/cm 2 , FF = 86.42%, respectively. The rippling of the output parameters with respect to the change in series and shunt resistances has also been probed and demonstrated. All the findings reveal the prospect of n -AlSb/ p -AIT/ p + -BaSi 2 dual-heterojunction thin film photovoltaic cell.