Controllable fabrication and applications of one‐dimensional silicon carbide nanomaterials: A review
Chuanfang Liu, Chuanfang Liu, Lin Fang, Kai Zhang, Xiaokang Cai, Chao Liu, Chao Liu, Zhongrong Shen
Abstract
Abstract One‐dimensional silicon carbide nanomaterials (1D SiC NMs) demonstrate broad application prospects in fields such as reinforcement, toughening, and electromagnetic wave absorption, owing to their superior properties including high modulus, high hardness, high‐temperature resistance, and high dielectric loss. However, the growth of 1D SiC NMs presents a series of problems. These include the highly complex competition between nucleation and epitaxial growth, the randomness of crystal nucleus formation, among other issues. The realization of low‐cost and high‐yield production and controllable production of 1D SiC NMs remains a significant challenge. This paper centers on the synthesis and design advancements in fabricating 1D SiC NMs via chemical vapor deposition and carbothermal reduction methods. Specifically, the following aspects are reviewed: growth synthesis, raw material selection, reaction parameters, and characterization methods. Controlling crystal nucleation and epitaxial growth in the growth process through the selection of raw materials and the design of reaction parameters. The latter half of the review presents 1D SiC NMs applications in the fabrication of high‐performance ceramic‐based, metal‐based composites, wave‐absorbing materials, and other applications. The aim of this paper is to provide researchers with more ideas and methods for synthesis research, and to encourage further exploration in this field, in order to promote the low‐cost, high‐yield synthesis, and widespread application of 1D SiC NMs.