Litcius/Paper detail

Hybrid Si$_3$N$_4$/VO$_2$ Modulator Thermally Triggered by a Graphene Microheater

Babak Janjan, Mehdi Miri, Davood Fathi, Mohsen Heidari, Derek Abbott

2020IEEE Journal of Selected Topics in Quantum Electronics25 citationsDOI

Abstract

Si <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> N <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> has emerged as a prominent material for expanding the capability of silicon photonics to wavelengths below <; 1 μm. However, realizing an efficient optical modulator, a key building block for any integrated optics platform, remains a major challenge in Si <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> N <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> mainly because this material has a vanishing Pockels coefficient. Here, we propose a compact Si <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> N <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> based optical modulator by using a thin VO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> layer on top of a Si <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> N <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> strip waveguide where amplitude modulation is achieved via phase transition of the VO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> layer. To reduce the actuation time of the temperature induced VO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> phase transition, a mono-layer graphene microheater is designed for the active Si <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> N <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> VO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> waveguide. Our simulations indicate a high extinction ratio of ~8.28 dB/μm with an insertion loss of ~2.8 dB/μm at the design wavelength of 850 nm for the proposed modulator and wideband operation in the wavelength range of 800-900 nm. It is shown that employing the electrical and thermal properties of graphene not only leads to a significant reduction of the power consumption of the device but also, decreases the actuation time compared to previous modulators based on the thermal phase transition of the VO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> .

Topics & Concepts

MicroheaterMaterials scienceGrapheneOptoelectronicsModulation (music)NanotechnologyPhysicsFabricationPathologyAlternative medicineMedicineAcousticsAdvanced Memory and Neural ComputingTransition Metal Oxide NanomaterialsThin-Film Transistor Technologies