Spintronic Devices upon 2D Magnetic Materials and Heterojunctions
Zhiyan Jia, Mengfan Zhao, Qian Chen, Yuxin Tian, Lixuan Liu, Fang Zhang, Delin Zhang, Yue Ji, Bruno Cury Camargo, Kun Ye, Rong Sun, Zhongchang Wang, Yong Jiang
Abstract
. This review provides a comprehensive overview of the construction, measurement, and mechanisms of 2D SOT heterojunctions. The TMR effect observed in 2D materials also exhibits significant potential for various applications. Specifically, the spin-filter effect in layered A-type antiferromagnets has led to giant TMR ratios approaching 19,000%. Here, we review the physical mechanisms underlying the TMR effect, along with the design of high-performance devices such as magnetic tunnel junctions (MTJ) and spin valves. This review summarizes different structural types of 2D heterojunctions and key factors that enhance TMR values. These advanced devices show promising prospects in fields such as magnetic storage. We highlight significant advancements in the integration of 2D materials in SOT, MTJ, and spin valve devices, which offer advantages such as high-density storage capability, low-power computing, and fast data transmission rates for Magnetic Random Access Memory and logic integrated circuits. These advancements are expected to revolutionize future developments in information technology.