Demonstration of a ring-FEL as an EUV lithography tool
Jaeyu Lee, Gyeongsu Jang, J. Kim, Bonggi Oh, D.E Kim, Sangsul Lee, Jae H. Kim, J. Ko, Changjun Min, S. Shin
Abstract
This paper presents the required structure and function of a ring-FEL as a radiation source for extreme ultraviolet radiation lithography (EUVL). A 100 m-long straight section that conducts an extremely low emittance beam from a fourth-generation storage ring can increase the average power at 13.5 nm wavelength to up to 1 kW without degrading the beam in the rest of the ring. Here, simulation results for a ring-FEL as a EUVL source are described.
Topics & Concepts
Extreme ultraviolet lithographyStorage ringExtreme ultravioletRing (chemistry)OpticsLithographyThermal emittancePhysicsWavelengthRadiationBeam (structure)OptoelectronicsLight sourceMaterials scienceChemistryLaserOrganic chemistryParticle Accelerators and Free-Electron LasersParticle accelerators and beam dynamicsAdvanced X-ray Imaging Techniques