Improved performance of transparent conductive Cu-based GZO multilayer thin films on flexible substrates via two Al2O3 layers and oxygen-containing atmosphere
Yang Liu, Qingdong Zeng, Boyun Wang, Changjiang Nie, Honghua Ma, Huaqing Yu
Abstract
High performance of transparent conductive Cu-based Ga: ZnO (GZO) multilayer thin films deposited on flexible substrates are achieved by two Al 2 O 3 barrier layers and oxygen. The multilayers exhibit high figure of merit (FOM) of 3.03 × 10 −2 Ω −1 with the resistivity of 4.24 × 10 −5 Ω cm and sheet resistance of 6.06 Ω/sq., while the average optical transmittance is above 84% in the visible range. The FOM value is the highest among all the reported Cu-based transparent conductive thin films . The influence mechanisms of Al 2 O 3 layers and oxygen on structural, morphological, electrical and optical properties of the multilayer films are also investigated. These results indicate that the insertion of two thin Al 2 O 3 barrier layers and the filling of oxygen during the deposition of GZO layers is an effective way to improve the photoelectric performance of the Cu-based GZO multilayer films .