Domain Dynamics and Resistive Switching in Ferroelectric Al<sub>1–x</sub>Sc<sub>x</sub>N Thin Film Capacitors
Haidong Lu, Georg Schönweger, A. Petraru, H. Kohlstedt, Simon Fichtner, Alexei Gruverman
Abstract
Abstract In this paper, using a combination of pulse testing measurements and piezoresponse force microscopy (PFM), an investigation of the polarization reversal behavior and the accompanying resistive switching in the Al 0.72 Sc 0.28 N thin film capacitors is reported. The obtained results reveal a transition from the nucleation‐limited switching (NLS) in the low field range toward the more uniform switching described by the Kolmogorov–Avrami–Ishibashi (KAI) model in the high field range. It is found that the Al 0.72 Sc 0.28 N capacitors exhibit an unusually steep change in the switching time– it decreases by five orders of magnitude with a moderate increase of the applied field. This feature is caused by a significantly higher activation field value (≈126 MV cm −1 ) in comparison with the conventional perovskite ferroelectrics. PFM visualization of the field‐induced domain dynamics has allowed the evaluation of the nucleation rate and domain wall velocity. Furthermore, capacitors in the polydomain state generated by partial switching of polarization exhibit a significant (up to two orders of magnitude) increase in the steady‐state conductance. This effect is likely caused by the injection of strongly inclined conducting 180° domain walls. Resistance tunability offers additional functionalities to the Al 1‐x Sc x N devices where conductive domain walls are used as active elements.