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Molybdenum disulfide transistors with enlarged van der Waals gaps at their dielectric interface via oxygen accumulation

Pengfei Luo, Chang Liu, Jun Lin, Xinpei Duan, Wujun Zhang, Chao Ma, Yawei Lv, Xuming Zou, Yuan Liu, Frank Schwierz, Wenjing Qin, Lei Liao, Jun He, Xingqiang Liu

2022Nature Electronics178 citationsDOI

Topics & Concepts

van der Waals forceMolybdenum disulfideDielectricHafniumMaterials scienceGate dielectricTransistorPassivationChemistryOptoelectronicsNanotechnologyElectrical engineeringMoleculeZirconiumVoltageLayer (electronics)Composite materialMetallurgyEngineeringOrganic chemistry2D Materials and ApplicationsFerroelectric and Negative Capacitance DevicesMXene and MAX Phase Materials
Molybdenum disulfide transistors with enlarged van der Waals gaps at their dielectric interface via oxygen accumulation | Litcius