Monolithic Integration of 80-GHz Ge Photodetectors and 100-GHz Ge Electro-Absorption Modulators in a Photonic BiCMOS Technology
Daniel Steckler, Stefan Lischke, Anna Pęczek, Aleksandra Kroh, Johannes Beyer, Lars Zimmermann
Abstract
We demonstrate a photonic BiCMOS technology featuring waveguide (WG)-coupled germanium electro-absorption modulators (EAMs) and photodetectors with respective 3-dB bandwidths of 100 and 80 GHz, monolithically integrated with high-performance SiGe-heterojunction bipolar transistors (HBTs) and 0.25- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> CMOS. The EAMs feature dynamic extinction ratios of 2.3 dB at a symbol rate of 112 GBaud at 1.8 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{V}_{\text {pp}}$ </tex-math></inline-formula> and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\lambda $ </tex-math></inline-formula> = 1590 nm. We demonstrate that there is no degradation of the baseline technology “SG25H5EPIC” in terms of electronic device yield or performance.