Coherent growth of <i>β</i>-(Al<sub> <i>x</i> </sub>Ga<sub>1−<i>x</i> </sub>)<sub>2</sub>O<sub>3</sub> alloy thin films on (010) <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> substrates using mist CVD
Masahiro Kaneko, Hiroyuki Nishinaka, Kazutaka Kanegae, Masahiro Yoshimoto
Abstract
Abstract Herein, we demonstrate β -(Al x Ga 1− x ) 2 O 3 thin films that were coherently grown on a (010) β -Ga 2 O 3 substrate using mist chemical vapor deposition (CVD). X-ray diffraction and reciprocal space mapping results revealed that the β -(Al x Ga 1− x ) 2 O 3 thin films were of high-crystalline quality and were grown coherently to attain an Al content of 18.3% as measured by Rutherford backscattering spectroscopy. Importantly, based on their surface morphologies, the coherently grown β -(Al x Ga 1− x ) 2 O 3 thin films have atomically flat surfaces. These results indicate that mist CVD is a promising technique for β -(Al x Ga 1− x ) 2 O 3 / β -Ga 2 O 3 heterojunction devices.