Numerical Investigation of Electron/Hole Transport Layer for Enhancement of Ecofriendly Tin-Ge Based Perovskite Solar Cell
Nitesh Kumar Singh, Anshul Agarwal
Abstract
The current study examines the influence of different hole transport layers (HTL) and electron transport layers (ETL) on an environmentally friendly CsSn0.5Ge0.5I3 based perovskite solar cell. The numerical analysis of a novel heterojunction structure of FTO/WS2/CsSn0.5Ge0.5I3/Zn3P2/Pt was done using SCAPS software. Initially, a suitable HTL (i.e. Zn3P2) and ETL (WS2) were chosen after analyzing various inorganic HTL and ETL materials. The optimized thickness values of the perovskite film and HTL layer were also measured. Different physical parameters of layers were also measured, such as defect concentration, radiative recombination, energy bandgap of the absorber layer, interface defect concentration, and series and shunt resistances. These analyses revealed that optimizing these parameters improves the electrical rendition of the Tin-Ge-based perovskite solar cell. The photovoltaic cell’s energy conversion efficiency (ECE) value increased to 26.22%, current density (Jsc) to 27.182 mA/cm2, and open-circuit voltage (Voc) to 1.116 V, and fill factor (FF) to 86.40%.