Construction of Cu<sub>2</sub>MoS<sub>4</sub>/ZnO Heterostructures and Mechanism of Photocatalytic Hydrogen Production
Yanli Zhuang, Hao Cheng, Shuo Tian, Yancheng Hao, Jikun Pan, Zihuan Zhang, Dan Li, Limin Dong, Jian Li, You Li, Xinxin Jin
Abstract
Constructing wide and narrow band gap heterogeneous semiconductors is a method to improve the activity of photocatalysts. In this paper, CMS/ZnO heterojunctions were prepared by solvothermal loading of ZnO particles on the surface of Cu 2 MoS 4 nanosheets. The photocatalytic H 2 precipitation rate is about 545 μmol·g –1 ·h –1, which is 6.8 times that of Cu 2 MoS 4 and 3 times that of ZnO without any cocatalyst. After etching modification of CMS, the photocatalytic hydrogen production efficiency of the ECMS/ZnO heterojunction is further improved. Its hydrogen production efficiency reaches about 1115 μmol·g –1 ·h –1, which is 9 times that of ECMS and 6 times that of ZnO. The reasons are mainly attributed to the following two factors: (1) the formation of the ECMS/ZnO type-II-type heterojunction facilitates the effective separation of photogenerated electrons and holes; (2) the band structure of Cu 2 MoS 4 was optimized by etching modification, which made the ECMS/ZnO heterojunction have lower interfacial charge transfer resistance and improved the photocatalytic hydrogen production activity of the heterojunction.