Wafer-scale carbon nanotube network transistors
Yongwoo Lee, Jinsu Yoon, Hyo-Jin Kim, Geon-Hwi Park, Ju Won Jeon, Dae Hwan Kim, Dong Myong Kim, Min‐Ho Kang, Sung‐Jin Choi
Abstract
Highly purified, preseparated semiconducting carbon nanotubes (CNTs) hold great potential for high-performance CNT network transistors due to their high electrical conductivity, high mechanical strength, and room-temperature processing compatibility. In this paper, we report our recent progress on CNT network transistors integrated on an 8-inch wafer. We observe that the key device performance parameters of CNT network transistors at various locations on an 8-inch wafer are highly uniform and that the device yield is impressive. Therefore, this work validates a promising path toward mass production and will make a significant contribution to the future field of wafer-scale CNT electronics.