Air-stable perovskite photovoltaic cells with low temperature deposited NiOx as an efficient hole-transporting material
A. K. Mahmud Hasan, Itaru Raifuku, Nowshad Amin, Yasuaki Ishikawa, Debarghya Sarkar, K. Sobayel, Mohammad Rezaul Karim, Anwar Ul‐Hamid, Hewa Y. Abdullah, Md. Shahiduzzaman, Yukiharu Uraoka, Kamaruzzaman Sopian, Md. Akhtaruzzaman
Abstract
The electron-beam physical vapor deposition (EBPVD) technique was selected for nickel oxide (NiO x ) film deposition at room temperatures. NiO x film (18 nm thick) was deposited as a hole transporting material (HTM) for inverted perovskite solar cells (PSCs) onto a fluorine-doped tin oxide (FTO)-coated glass substrate at a chamber vacuum pressure of 4.6×10 4 Pa. PSCs were fabricated as a glass/FTO/NiO x (HTM)/CH 3 NH 3 PbI 3 /PC 61 BM/BCP/Ag structure with as-deposited and annealed (500 °C for 30 min) NiOx films. Under 100 mW cm -2 illumination, as-deposited and annealed NiO x as HTM in PSCs (0.16 cm 2 ) showed a high-power conversion efficiency (PCE) of 13.20% and 13.24%, respectively. The as-deposited and annealed PSCs retained 72.2% and 76.96% of their initial efficiency in ambient conditions, correspondingly. This study highlights the possibility of achieving highly crystalline and finely disseminated NiO x films by EBPVD for fabricating efficient inverted PSCs.