A review of gallium oxide-based power Schottky barrier diodes
Xueqiang Ji, Chao Lu, Zuyong Yan, Shan Li, Xu Yan, Jinjin Wang, Jianying Yue, Xiaohui Qi, Zeng Liu, Weihua Tang, Peigang Li
Abstract
Abstract Gallium oxide (Ga 2 O 3 ) is a representative of ultra-wide bandgap semiconductors, with a band gap of about 4.9 eV. In addition to a large dielectric constant and excellent physical and chemical stability, Ga 2 O 3 has a theoretical breakdown electric field strength of more than 8 MV cm −1 , which is 27 times more than that of Si and about twice as large as that of SiC and GaN. It is guaranteed that Ga 2 O 3 has irreplaceable applications in ultra-high-power (1–10 kW) electronic devices. Unfortunately, due to the difficulty of p-type doping of Ga 2 O 3 , the full Ga 2 O 3 -based bipolar devices face more difficulties, and the unipolar Ga 2 O 3 power Schottky diodes are feasible, but substantial progress has been made in recent years. In this article, we review the advanced progress and important achievements of the state-of-the-art Ga 2 O 3 -based power Schottky barrier diodes, and provide staged guidance for the further development of Ga 2 O 3 power devices. Multiple types of device architectures, including basic structure, edge terminal processing, field-plated, trench and heterojunction p–n structure, will be discussed in detail.