Effects of Annealing Temperature on TiN/Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>/TiN Ferroelectric Capacitor Prepared by <i>In-Situ</i> Like Consecutive Atomic Layer Deposition
Yan-Kui Liang, Yi-Shuo Huang, Li-Chi Peng, Tsung-Ying Yang, Bo-Feng Young, Chun‐Chieh Lu, Sai Hooi Yeong, Yu-Ming Lin, Chun-Jung Su, Edward-Yi Chang, Chun-Hsiung Lin
Abstract
In this letter, the ferroelectric characteristics and reliability of TiN/Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>/TiN Metal-Ferroelectric-Metal (MFM) capacitor fabricated using the <i>‘‘in-situ’’</i> like consecutive atomic layer deposition (<i>C-ALD</i>) and the <i>“ex-situ”</i> deposition techniques are compared for different post metal annealing (PMA) temperatures. We suggested that <i>C-ALD</i> deposition improves the interface of the ferroelectric HZO film and the higher PMA temperature further improves the crystal quality. We found that <i>wake-up</i> tends to happen for both types of samples with lower PMA temperature, indicating the possible higher dependence of <i>“wake-up”</i> on crystallinity. Nevertheless, <i>C-ALD</i> and higher PMA temperature are both required to prevent early breakdown. <i>C-ALD</i> samples combined with 600 °C PMA showed the excellent remanent polarization (2P<sub>r</sub>) of 53 μC/cm<sup>2</sup>, endurance properties of 10<sup>11</sup> cycles, and outstanding time-dependent dielectric breakdown (TDDB) characteristics.