Coexistence of Ferroelectricity and Ferromagnetism in One-Dimensional SbN and BiN Nanowires
Chao Yang, Miaogen Chen, Si Li, Xuanlin Zhang, Chenqiang Hua, Hua Bai, Chengcheng Xiao, Shengyuan A. Yang, Pimo He, Zhu‐An Xu, Yunhao Lu
Abstract
Ferroelectricity exists in a variety of three- and two-dimensional materials and is of great significance for the development of electronic devices. However, the presence of ferroelectricity in one-dimensional materials is extremely rare. Here, we predict ferroelectricity in one-dimensional SbN and BiN nanowires. Their polarization strengths are 1 order of magnitude higher than ever reported values in one-dimensional structures. Moreover, we find that spontaneous spin polarization can be generated in SbN and BiN nanowires by moderate hole doping. This is the first time the coexistence of both ferroelectricity and ferromagnetism in a one-dimensional system has been reported. Our finding not only broadens the family of one-dimensional ferroelectric materials but also offers a promising platform for novel electronic and spintronic applications.