Demonstration of relaxed InGaN-based red LEDs grown with high active region temperature
Philip Chan, Vincent Rienzi, Norleakvisoth Lim, Hsun–Ming Chang, Michael J. Gordon, Steven P. DenBaars, Shuji Nakamura
Abstract
Red LEDs were grown by metalorganic chemical vapor deposition with a high active region temperature of 870 °C on a relaxed InGaN/GaN superlattice buffer. The buffer was 100% biaxially relaxed by the thermal decomposition of an InGaN underlayer, measured by high resolution X-ray diffraction. Fabricated LEDs showed a low forward voltage of 2.25 V at a current density of 25 Acm−2 with no Al-containing layers in the active region, a peak emission wavelength of 633 nm at 200 Acm−2 and an on-wafer peak external quantum efficiency of 0.05%. Uniform red emission and relaxation were observed across a two inch substrate.
Topics & Concepts
Light-emitting diodeMaterials scienceOptoelectronicsChemical vapor depositionMetalorganic vapour phase epitaxyQuantum efficiencySuperlatticeWaferSubstrate (aquarium)DiodeEpitaxyNanotechnologyLayer (electronics)GeologyOceanographyGaN-based semiconductor devices and materialsZnO doping and propertiesGa2O3 and related materials