Ferroelectric BaTiO<sub>3</sub> for Electro-Optic Modulators in Si Photonics
Alexander A. Demkov, Agham Posadas
Abstract
Over the past decade, Si-integrated single crystal thin film BaTiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> (BTO) has emerged as a promising material platform for a new generation of electro-optic devices in silicon photonics. Despite being relatively young, the BTO technology has demonstrated impressive achievements, such as a very low V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">π</sub> , high bandwidth and linear frequency response, low insertion loss, low power operation and high-speed data transfer. These, combined with novel integration concepts, open a plethora of exciting novel applications in high-speed communication, computing, and sensing. Here we offer a quick snapshot of current developments in this field.