Mechanism and principle of doping: realizing of silver incorporation in CdS thin film<i>via</i>doping concentration effect
Asmaa Soheil Najm, Abdulwahab Aljuhani, Hasanain Salah Naeem, Kamaruzzaman Sopian, Raid A. Ismail, Araa Mebdir Holi, Laith S. Sabri, Asla Abdullah Al-Zahrani, Rashed T. Rasheed, Hazim Moria
Abstract
) and the lowest resistivity (45.2 Ω cm). According to the results, the optimal Ag ratio was obtained at Ag 5%, which encourages the usage of CdS in this ratio as an efficient buffer layer on photovoltaic devices.
Topics & Concepts
DopingMechanism (biology)Layer (electronics)Thin filmMaterials scienceOptoelectronicsBuffer (optical fiber)Thin layerNanotechnologyChemical engineeringComputer sciencePhysicsTelecommunicationsEngineeringQuantum mechanicsQuantum Dots Synthesis And PropertiesChalcogenide Semiconductor Thin FilmsCopper-based nanomaterials and applications