Low-noise balanced mixer for 300-GHz band based on Fermi-level managed barrier diode on SiC platform
Hiroshi Itô, Yuma Kawamoto, Takahiro Ohara, Tadao Nagatsuma, Tadao Ishibashi
Abstract
We developed a terahertz-wave balanced mixer fabricated on a SiC substrate using epi-layer-transferred InP/InGaAs Fermi-level managed barrier (FMB) diodes. The FMB diodes were monolithically integrated with waveguide couplers, a 90-degree hybrid circuit, and low-pass filters. The fabricated mixer was then assembled in a two-input-port module with a broadband transimpedance amplifier and exhibited an intermediate frequency bandwidth of about 26 GHz with good inter-port isolations of more than 13 dB. The obtained minimum noise equivalent power was as low as 2 × 10-19 W/Hz in the fundamental mixing mode at around 300 GHz for a local-oscillator power of about 400 μW.
Topics & Concepts
OptoelectronicsMaterials scienceDiodeTerahertz radiationLocal oscillatorBroadbandAmplifierBandwidth (computing)Noise temperatureTransimpedance amplifierElectrical engineeringRadio frequencyPhase noiseTelecommunicationsEngineeringOperational amplifierCMOSRadio Frequency Integrated Circuit DesignMicrowave Engineering and WaveguidesSemiconductor Quantum Structures and Devices