Electric-Field-Induced Coherent Control of Nitrogen-Vacancy Centers
Gerald Q. Yan, Senlei Li, Tatsuya Yamamoto, Mengqi Huang, Nathan J. McLaughlin, Takayuki Nozaki, Hailong Wang, Shinji Yuasa, Chunhui Du
Abstract
Enabling scalable and energy-efficient control of spin defects in solid-state media is desirable for realizing transformative quantum information technologies. Exploiting voltage-controlled magnetic anisotropy, we report the coherent manipulation of nitrogen-vacancy ($\mathrm{N}$-V) centers by spatially confined magnetic stray fields produced by a proximate resonant magnetic tunnel junction (MTJ). Remarkably, the coherent coupling between $\mathrm{N}$-V centers and the MTJ can be systematically controlled by a dc bias voltage, allowing for appreciable electrical tunability in the presented hybrid system. In comparison with current state-of-the-art techniques, the demonstrated $\mathrm{N}$-V-based quantum operational platform exhibits significant advantages in scalability, device compatibility, and energy efficiency, further expanding the role of $\mathrm{N}$-V centers in a broad range of quantum computing, sensing, and communications applications.