Highly Stretchable MoS<sub>2</sub>‐Based Transistors with Opto‐Synaptic Functionalities
Jiawei Li, Na Li, Qinqin Wang, Zheng Wei, Congli He, Dashan Shang, Yutuo Guo, Woyu Zhang, Jian Tang, Jieying Liu, Shuopei Wang, Wei Yang, Rong Yang, Dongxia Shi, Guangyu Zhang
Abstract
Abstract Stretchable devices can form intimate interfaces with the attached objects, giving birth to widespread applications in wearable electronics, bioelectronics, and artificial bionics. The emerging 2D materials are considered to be ideal candidates for stretchable electronics due to their ultra‐thin nature and excellent mechanical properties. However, stretchable 2D semiconductor devices previously demonstrated usually work at insufficient strain range with poor device performances mostly due to a mechanical failure. Here, the fabrication of buckled monolayer molybdenum disulfide (MoS 2 ) field effect transistors (FETs) on elastomeric substrates is reported. These stretchable MoS 2 FETs show stable performances with mobility of ≈30 cm 2 V −1 s −1 , on/off ratio of ≈10 8 , and subthreshold swing (SS) of ≈180 mV dec −1 after many cycled stretching‐release processes under more than 10% strain. In particular, the feasibility of applying these stretchable MoS 2 transistors in optoelectronic synapse and neural network simulation in recognition tasks has been demonstrated.