Large tunneling magnetoresistance in spin-filtering 1T-MnSe<sub>2</sub>/h-BN van der Waals magnetic tunnel junction
Zhao Chen, Xiaofeng Liu, Xingxing Li, Xingxing Li, Pengfei Gao, Zhongjun Li, Weiduo Zhu, Haidi Wang, Xiangyang Li, Xiangyang Li
Abstract
% with the magnetization information written by an electric field at room temperature. In addition, the performance of the TMR effect exhibits good stability even when the bias voltage increases gradually. Our theoretical findings show that this proposed MTJ is a promising high performance spintronic device and could promote the design of ultralow-power spintronic devices.
Topics & Concepts
Condensed matter physicsSpintronicsTunnel magnetoresistanceMagnetizationMagnetoresistanceQuantum tunnellingMaterials scienceMagnetic fieldElectric fieldAntiparallel (mathematics)PhysicsFerromagnetismQuantum mechanics2D Materials and ApplicationsQuantum and electron transport phenomenaGraphene research and applications