Electron and hole doping of monolayer <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>WSe</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math> induced by twisted ferroelectric hexagonal boron nitride
J. Fraunié, Rayan Jamil, Richard Kantelberg, Sébastien Roux, L. Petit, Emmanuel Lepleux, Louis Pacheco, Kenji Watanabe, Takashi Taniguchi, V. Jacques, Laurent Lombez, M. M. Glazov, B. Lassagne, X. Marie, Cédric Robert
Abstract
2D ferroelectric materials have attracted strong interest for their potential in future nanoelectronic devices. The recent discovery of 2D ferroelectricity in twisted layers of hexagonal boron nitride has opened the route to its integration into complex hybrid van der Waals heterostructures. Here the authors show that opposite polarizations in ferroelectric domains of a folded hBN layer imprint local $n$ and $p$ doping in a semiconducting WSe${}_{2}$ monolayer. They demonstrate that WSe${}_{2}$ can be used as an optical probe of ferroelectricity in hBN and show that doping can be controlled with the position of the semiconductor with respect to the ferroelectric interface.