Enhanced performance and low-power capability of SiGeAsSe-GeSbTe 1S1R phase-change memory operated in bipolar mode
Taras Ravsher, Daniele Garbin, A. Fantini, R. Degraeve, Sergiu Clima, Gabriele Luca Donadio, Shreya Kundu, Hubert Hody, Wouter Devulder, Jan Van Houdt, Valeri Afanas’ev, Romain Delhougne, Gouri Sankar Kar
20222022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)18 citationsDOIOpen Access PDF
Abstract
The impact of pulse polarity on the performance of SiGeAsSe-GeSbTe 1S1R cell is studied. Reversing the Write polarity leads to increased memory window with possibility of multi-level programming. The Write current can be reduced down to <40uA, enabling low-power operation. Good cycling endurance (>1e8) and retention characteristics are maintained.
Topics & Concepts
Phase-change memoryPolarity (international relations)Materials scienceData retentionNon-volatile memoryPower (physics)ReversingOptoelectronicsMagnetoresistive random-access memoryComputer scienceElectronic engineeringRandom access memoryComputer hardwareNanotechnologyEngineeringPhysicsChemistryCellComposite materialBiochemistryLayer (electronics)Quantum mechanicsPhase-change materials and chalcogenidesChalcogenide Semiconductor Thin FilmsNonlinear Optical Materials Research