Substitutional doping of 2D transition metal dichalcogenides for device applications: Current status, challenges and prospects
Rajeev Kumar, Amit Kumar Shringi, H. L. Wood, Ivy M. Asuo, Seda Oturak, David Sánchez, Tata Sanjay Kanna Sharma, Rajneesh Chaurasiya, Avanish Mishra, Won Mook Choi, Nutifafa Y. Doumon, Ismaïla Dabo, Mauricio Terrones, Fei Yan
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDs) have emerged as a class of materials with exceptional electronic, optical, and mechanical properties, making them highly tunable for diverse applications in nanoelectronics, optoelectronics , and catalysis. This review focuses on substitutional doping of TMDs, a key strategy to tailor their properties and enhance device performance, with a focus on its applications over the past five years (2019–2024). We delve into both theoretical and experimental doping approaches, including established methods like chemical vapor transport (CVT) and chemical vapor deposition (CVD) alongside liquid phase exfoliation (LPE) and post-synthesis treatments. Advanced growth techniques are also explored. Challenges like dopant uniformity, concentration control, and stability are addressed. The influence of various dopants on the electronic band structure , carrier concentration, and defect engineering is analyzed in detail. We further explore recent advancements in utilizing doped TMDs for field-effect transistors (FETs), photodetectors, sensors, photovoltaics , optoelectronic devices , energy storage and conversion , and even quantum computers . By examining both the potential and limitations of substitutional doping, this review aims to propel future research and technological advancements in this exciting field.