Modelling and mitigating oscillation in E-mode GaN HEMT: A simulation-based approach to parasitic inductance optimization
Xinzhi Liu, Suhaidi Shafie, Mohd Amran Mohd Radzi, Norhafiz Azis, Abdul Hafiz Abdul Karim
Topics & Concepts
High-electron-mobility transistorParasitic extractionParasitic elementInductanceOscillation (cell signaling)Gallium nitrideTransistorElectrical engineeringPower electronicsElectronic engineeringEngineeringComputer scienceMaterials scienceVoltageNanotechnologyLayer (electronics)BiologyGeneticsGaN-based semiconductor devices and materialsSilicon Carbide Semiconductor TechnologiesRadio Frequency Integrated Circuit Design