Enhancing Ag-alloyed Cu<sub>2</sub>ZnSnS<sub>4</sub> solar cell performance by interfacial modification <i>via</i> In and Al
Ping Fan, Yang He, Guangxing Liang, Zhigao Xie, Zixuan Yu, Jinhong Lin, Shuo Chen, Zhuanghao Zheng, Jingting Luo, Zhenghua Su
Abstract
Interface doping with In 3+ and Al 3+ improved the concentrations of n and p type carriers on CdS/CAZTS heterojunction and the interface band alignment was also optimized, 11.2% and 10.7% efficiency for devices with ITO and AZO were achieved.
Topics & Concepts
Materials scienceDopingHeterojunctionOptoelectronicsSolar cellInterface (matter)Chemical engineeringNanotechnologyComposite materialCapillary numberCapillary actionEngineeringChalcogenide Semiconductor Thin FilmsQuantum Dots Synthesis And PropertiesCopper-based nanomaterials and applications