Obvious ferroelectricity in undoped HfO<sub>2</sub> films by chemical solution deposition
Haiyan Chen, Yonghong Chen, Lin Tang, Hang Luo, Kechao Zhou, Xi Yuan, Dou Zhang
Abstract
Although great achievements have been made in realizing ferroelectricity in HfO<sub>2</sub>-based films by the ALD method, the performance is strongly constrained by film thickness and dopant types.
Topics & Concepts
FerroelectricityDopantMaterials scienceDeposition (geology)Chemical engineeringNanotechnologyEngineering physicsOptoelectronicsDopingDielectricEngineeringBiologySedimentPaleontologyFerroelectric and Negative Capacitance DevicesSemiconductor materials and devicesMXene and MAX Phase Materials