Litcius/Paper detail

6Ag2Se + Ag8GeTe6 ↔ 6Ag2Te + Ag8GeSe6 Reciprocal System

A. J. Amiraslanova, A. T. Mammadova, S. Z. Imamaliyeva, I.J. Alverdiyev, Yu. A. Yusibov, М. Б. Бабанлы

2023Russian Journal of Inorganic Chemistry10 citationsDOI

Abstract

Abstract Here, we present the results of DTA and XRD studies of phase equilibria in the 6Ag2Se + Ag8GeTe6 ↔ 6Ag2Te + Ag8GeSe6 reciprocal system (system A). A Т–х diagram of the Ag8GeSe6–Ag8GeTe6 boundary system, several inner polythermal sections, isothermal sections at 300 and 1000 K, and the liquidus surface projection were plotted. The Ag8GeSe6–Ag8GeTe6 system is a partially quasi-binary system; it features continuous substitutional solid solutions between Ag8GeTe6 and the high-temperature cubic Ag8GeSe6 phase (the δ phase). Once solid solutions are formed, the polymorphic transition temperature in Ag8GeSe6 decreases, thereby stabilizing the ion-conducting cubic phase in the range of ≥40 mol % Ag8GeTe6 compositions at room temperature and below it. System A is shown to be a reversible reciprocal system; its liquidus surface is comprised of three fields, which relate to the primary crystallization of the solid solutions between the high-temperature Ag2Se and Ag2Te (α phase) phases, IT-Ag2Te-base solid solutions (β phase), and the δ phase. The subsolidus portion of system A features complex interactions related to polymorphism in the terminal compounds and in phases based on them.

Topics & Concepts

LiquidusPhase diagramSolid solutionCongruent meltingIsothermal processThermodynamicsCrystallizationPhase (matter)Binary systemTernary numeral systemMetastabilityPhase boundaryChemistryCrystallographyMaterials scienceBinary numberPhysicsMathematicsOrganic chemistryArithmeticAdvanced Thermoelectric Materials and DevicesChalcogenide Semiconductor Thin FilmsPhase-change materials and chalcogenides