Robust ferromagnetism in wafer-scale monolayer and multilayer Fe3GeTe2
Ryan Roemer, Chong Liu, Ke Zou
Abstract
Abstract Monolayer iron germanium telluride Fe 3 GeTe 2 , one of the typical two-dimensional ferromagnetic materials, hitherto, has only been studied by exfoliated micron-sized samples. We achieve high-quality wafer-scale growth of thin Fe 3 GeTe 2 films by molecular beam epitaxy, greatly expanding the types of characterization tools employable and providing the possibility for its integration in devices like consumer electronics. Thickness-dependent transport measurements are used to characterize and probe for magnetic order. Ferromagnetic states exist in 1–10 layer thick Fe 3 GeTe 2 , with Curie temperatures ranging from ~75 K in one layer samples to above 175 K in ten layer samples. A single ferromagnetic phase with significant magnetic anisotropy is revealed for all layer numbers. We submit the capability of synthesizing, wafer-scale Fe 3 GeTe 2 as an essential step towards its fulfillment in any applications involving magnetism, such as spintronics.