Near‐Infrared Photoactive Semiconductor Quantum Dots for Solar Cells
Ru Zhou, Jun Xu, Paifeng Luo, Linhua Hu, Xu Pan, Jinzhang Xu, Yang Jiang, Lianzhou Wang
Abstract
Abstract Semiconductor quantum dots (QDs) are nanocrystals whose excitons are bound in 3D space. Owning to their remarkable quantum confinement effect, QDs exhibit a discontinuous electronic energy level structure similar to that of atoms, leading to novel physical, optical, and electrical properties for various optoelectronic device applications including solar cells. Near‐infrared photoactive narrow bandgap (NBG) QDs can maximize the use of solar energy through the quantum size effect, offering a good opportunity for designing highly efficient wide‐spectrum responsive solar cells. This review analyzes the recent research progress of NBG QDs as light absorbing materials in solar cells. The critical elaboration of the latest achievements both in material design and device optimization for NBG QD‐based solar cells (QDSCs), including QD synthesis and film fabrication, design of device configuration, classification of NBG QDs and their photovoltaic performance, strategies for performance improvements is focused upon. The current challenges and perspectives for the further advance of NBG QDSCs are also discussed.