Phase-engineered synthesis of atomically thin te single crystals with high on-state currents
Jun Zhou, Guitao Zhang, Wenhui Wang, Qian Chen, Weiwei Zhao, Hongwei Liu, Bei Zhao, Zhenhua Ni, Junpeng Lü
Abstract
Abstract Multiple structural phases of tellurium (Te) have opened up various opportunities for the development of two-dimensional (2D) electronics and optoelectronics. However, the phase-engineered synthesis of 2D Te at the atomic level remains a substantial challenge. Herein, we design an atomic cluster density and interface-guided multiple control strategy for phase- and thickness-controlled synthesis of α -Te nanosheets and β -Te nanoribbons (from monolayer to tens of μm) on WS 2 substrates. As the thickness decreases, the α -Te nanosheets exhibit a transition from metallic to n-type semiconducting properties. On the other hand, the β -Te nanoribbons remain p-type semiconductors with an ON-state current density (I ON ) up to ~ 1527 μA μm −1 and a mobility as high as ~ 690.7 cm 2 V −1 s −1 at room temperature. Both Te phases exhibit good air stability after several months. Furthermore, short-channel (down to 46 nm) β -Te nanoribbon transistors exhibit remarkable electrical properties (I ON = ~ 1270 μA μm −1 and ON-state resistance down to 0.63 kΩ μm) at V ds = 1 V.