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The relationship between AlGaN barrier layer thickness and polarization Coulomb field scattering in AlGaN/GaN heterostructure field-effect transistors

Guangyuan Jiang, Yuanjie Lv, Zhaojun Lin, Yang Liu, Mingyan Wang, Heng Zhou

2021Superlattices and Microstructures16 citationsDOI

Topics & Concepts

Materials scienceBarrier layerHeterojunctionScatteringOptoelectronicsCondensed matter physicsPolarization (electrochemistry)Layer (electronics)OpticsNanotechnologyPhysicsPhysical chemistryChemistryGaN-based semiconductor devices and materialsGa2O3 and related materialsZnO doping and properties
The relationship between AlGaN barrier layer thickness and polarization Coulomb field scattering in AlGaN/GaN heterostructure field-effect transistors | Litcius