Superhigh energy storage density on-chip capacitors with ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>/antiferroelectric Hf<sub>0.25</sub>Zr<sub>0.75</sub>O<sub>2</sub> bilayer nanofilms fabricated by plasma-enhanced atomic layer deposition
Yu-Li He, Guang Zheng, Xiaohan Wu, Wen-Jun Liu, David Wei Zhang, Shi‐Jin Ding
Abstract
is achieved together with an ESE of 56.5%. This work provides an effective way for developing CMOS process-compatible, eco-friendly and superhigh ESD three-dimensional capacitors for on-chip energy storage applications.
Topics & Concepts
CapacitorAntiferroelectricityFerroelectricityMaterials scienceEnergy storageChipHafniumEnergy densityCondensed matter physicsOptoelectronicsZirconiumElectrical engineeringEngineering physicsVoltageDielectricPhysicsThermodynamicsMetallurgyEngineeringPower (physics)Ferroelectric and Negative Capacitance DevicesMXene and MAX Phase MaterialsSemiconductor materials and devices