Genuine and faux single <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>G</mml:mi></mml:math> centers in carbon-implanted silicon
Alrik Durand, Yoann Baron, Félix Cache, Tobias Herzig, Mario Khoury, Sébastien Pezzagna, Jan Meijer, Jean‐Michel Hartmann, S. Reboh, Marco Abbarchi, Isabelle Robert-Philip, Jean‐Michel Gérard, V. Jacques, Guillaume Cassabois, A. Dréau
Abstract
Single color centers recently isolated in carbon-implanted silicon with an emission line at 1.28 $\ensuremath{\mu}$m have so far been identified as a well-known defect called the $G$ center. Here, the authors show that these single defects are split in two distinct families with specific single-photon properties. On one side, are the genuine $G$ centers, and on the opposite, the faux $G$ centers belonging to another defect, labeled the ${G}^{\ensuremath{\star}}$ center.
Topics & Concepts
SiliconPhotoluminescenceCenter (category theory)Carbon fibersQuantumPhotonMaterials scienceFluorescenceCrystallographic defectPhysicsOptoelectronicsCondensed matter physicsChemistryCrystallographyOpticsQuantum mechanicsComposite numberComposite materialDiamond and Carbon-based Materials ResearchSilicon Nanostructures and PhotoluminescenceIon-surface interactions and analysis